| 简介 |
PROBLEM TO BE SOLVED : To provide a nitride semiconductor light-emitting element which enables high brightness without increasing an introduction amount of a rare earth element while using a substrate having less environmental load; and provide a manufacturing method of the nitride semiconductor light-emitting element.
SOLUTION : A nitride semiconductor light-emitting element including in a luminescent layer 3, a nitride semiconductor added with a rare earth element and Mg comprises : a substrate 1 which is transparent to an emission wavelength by the luminescent layer; a first dielectric multilayer mirror 5 laminated on a top face side than the luminescent layer formed on the substrate; and a second dielectric multilayer mirror 6 laminated on a rear face of the substrate. A manufacturing method comprises the steps of : sequentially crystal growing an n-type layer, a luminescent layer and a p-type layer on a surface of a substrate; and depositing a first dielectric multilayer mirror on a top face of the p-type layer and a second dielectric multilayer mirror on a rear face of the substrate.
COPYRIGHT : (C)2015, JPO&INPIT |
客服热线：
手机版
二维码
