| 简介 |
Provided is a selective film manufacturing method for selectively forming a film on a substrate easily without using a CVD method only on a surface section which is composed of a material such as Si on the substrate surface and is to have the thin film formed thereon. In a reaction chamber filled with a reaction gas mainly composed of a mixed gas of hydrogen and a rare gas at a pressure of 10-202kPa (76-1, 520Torr), the substrate kept at a relatively high temperature and the target kept at a relatively low temperature with a volatile hydroxide are arranged in parallel. Electric discharge is generated between the substrate and the target, and a thin film of the target is selectively formed on the surface whereupon the film is to be formed, by using a difference between the film deposition speed on the surface section whereupon the film is to be formed and that on other surfaces. As the rare gas, He and Ne can be suitable used. |
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