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Clad textured metal substrate for forming epitaxial thin film thereon and method for manufacturing t 发明申请

2023-03-18 2800 487K 0

专利信息

申请日期 2025-07-21 申请号 EP08007324
公开(公告)号 EP1982830A2 公开(公告)日 2008-10-22
公开国别 EP 申请人省市代码 全国
申请人 Chubu Electric Power Co Inc; Tanaka Kikinzoku Kogyo K K
简介 The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100} cube texture in which a deviating angle Δϕ of crystal axes satisfies Δϕ ≤ 6 degree. The clad textured metal substrate for forming the epitaxial thin film thereon may have an intermediate layer on the surface of the copper layer so as to form the epitaxial thin film thereon which for instance is a superconducting oxide film, wherein the above described intermediate layer preferably includes at least one layer of a material selected from the group consisting of nickel, nickel oxide, zirconium oxide, rare-earth oxide, magnesium oxide, strontium titanate (STO), strontium barium titanate (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium and platinum.


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