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Conductive ceramic and member for a semiconductor manufacturing device and its manufacturing method 发明申请

2023-10-10 4400 1002K 0

专利信息

申请日期 2026-03-12 申请号 JP2005511776
公开(公告)号 JPWO2005008683A1 公开(公告)日 2006-09-07
公开国别 JP 申请人省市代码 全国
申请人 Foundation Osaka Industrial Promotion Organization801000061
简介 Conductive ceramics composed of conductive AlN, its producing process, and a member for a semiconductor production system employing conductive ceramics. Conventional AlN ceramics is difficult to exhibit high conductivity at room temperature but the inventive conductive ceramics composed of conductive AlN exhibits conductivity of 10S/cm or above at room temperature because the grain boundary phase contains a rare earth nitride which forms a continuous conductive network meshed three-dimensionally.


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