In the aluminum nitride substrate, for a semiconductor manufacturing device, CVD heater, and meth

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PROBLEM TO BE SOLVED : To provide : an aluminum nitride substrate which enables the suppression of occurrence of the warp or warpage of an aluminum nitride substrate even in the case of using no restraining sheet; a part for semiconductor manufacturing, a CVD heater, and a method for manufacturing an aluminum nitride substrate.SOLUTION : An aluminum nitride substrate 1 is composed of a sintered compact including aluminum nitride, and an auxiliary component including at least rare earth element of a rare earth element and an alkali-earth metal. The aluminum nitride substrate 1 comprises : laminates 15 and 17 each including two or more kinds of layers different in composition, which are stacked in a thickness direction of the aluminum nitride substrate 1.SELECTED DRAWING : Figure 1