INTEGRATED EPITAXIAL METAL ELECTRODES

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Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure (100), comprising a substrate (102), a first rare earth oxide layer (104) epitaxially grown over the substrate, a first metal layer (106) epitaxially grown over the rare earth oxide layer, and a first semiconductor layer (108) epitaxially grown over the first metal layer.