ION ASSISTED VAPOR DEPOSITION FOR RARE EARTH OXIDE BASED THIN FILM COATING ON PROCESS RING

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PROBLEM TO BE SOLVED : To provide a chamber processing ring having a thin film plasma resistant protective layer. SOLUTION : A ring 505 having a plasma resistant thin film protective layer 510 increases the life of the ring and reduces defects on a wafer without affecting plasma uniformity. The protective layer can have a thickness of up to about 300 μm. Plasma corrosion resistance can be provided to protect the ring. The protective layer can be formed on the ring using ion-assisted deposition (IAD). SELECTED DRAWING : Figure 5 COPYRIGHT : (C)2018, JPO&INPIT