Thin film transistor and method of manufacturing

文件类型：PDF文档
文件大小：301K
PROBLEM TO BE SOLVED : To easily optimize a threshold voltage in a thin-film transistor having an IGZO film.SOLUTION : In a bottom-gate thin-film transistor having a substrate 1, a gate electrode 2, a gate insulating layer 4, an In-Ga-Zn-O-based semiconductor layer 5 constituting a channel layer, and a protective film 6 coating the semiconductor layer 5, an insulating layer containing a rare-earth hydride 7 having insulation properties is provided on the protective film 6.