A RARE-EARTH METAL OXIDE RESISTIVE RANDOM ACCESS NON-VOLATILE MEMORY DEVICE

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A Resistive Random Access Memory device (1) comprising a stack of a lower oxygen affinity bottom electrode (4), a hygroscopic solid-state dielectric layer (3), comprising hydroxyl groups, and a higher oxygen affinity top electrode (2). Preferably this hygroscopic solid-state dielectric layer (3) is a rare-earth metal oxide layer.