PARASITIC CHARGE CONTROL FOR III-N MATERIALS ON SILICON

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A structure can include a substrate layer with an interface and a carrier concentration at the interface, a rare earth oxide barrier layer grown over the substrate layer, and a Group III layer grown over the rare earth oxide barrier layer. The carrier concentration at the interface can be different by more than an order of magnitude than the bulk carrier concentration. The rare earth oxide layer can include a rare earth oxide material and can prevent diffusion of Group III species into the substrate layer. The Group III layer can include a Group III element.