MULTILAYER THERMOELECTRIC CONVERSION ELEMENT

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This multilayer thermoelectric conversion element is provided with a p-type layer containing a p-type semiconductor material, an n-type layer containing an n-type semiconductor material, and an insulating layer containing an insulating material. This multilayer thermoelectric conversion element is characterized in that : a pn junction pair is formed by joining the p-type layer and the n-type layer with each other; the p-type semiconductor material and the n-type semiconductor material are directly joined with each other in a region of the junction surface between the p-type layer and the n-type layer; the p-type semiconductor material and the n-type semiconductor material are joined with each other with the insulating layer being interposed therebetween in the other regions of the junction surface; the p-type semiconductor material is an alloy containing Ni; the n-type semiconductor material is a composite oxide containing Sr, Ti, Zr, a rare earth element and O, and the molar ratio represented by Zr/(Ti + Zr) satisfies 0.0001 ≤ Zr/(Ti + Zr) ≤ 0.1; and the insulating material is a partially stabilized zirconia that contains ZrO2 and at least one metal oxide M selected from the group consisting of Y2O3 and CaO, and the molar ratio represented by M/(ZrO2 + M) satisfies 0.026 ≤ M/(ZrO2 + M) ≤ 0.040.