LIGHT ABSORPTION LAYER AND MANUFACTURING METHOD THEREFOR, AND PHOTOELECTRIC CONVERSION ELEMENT

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PROBLEM TO BE SOLVED : To provide a light absorption layer that is less in content of rare element and environmental load element and is able to obtain high conversion efficiency, to provide a manufacturing method therefor, and to provide a photoelectric conversion element using the same. SOLUTION : A light absorption layer is formed from a compound semiconductor containing at least Sn and Ge, and has a composition inclination of Ge/Sn ratio (atomic ratio) in the direction of film thickness. The photoelectric conversion element has the light absorption layer. The formation of this light absorption layer includes : (a) forming a first precursor containing Sn or Ge; (b) thermally processing the first precursor and forming a first film from a compound semiconductor (B) containing Sn or Ge; (c) forming a second precursor on the surface of the first film, containing Sn or Ge, and being the same as or different from the first precursor in the proportion of Sn; and (d) thermally processing the second precursor, and forming a second film being the same as or different from the first film in Ge/Sn ratio. The light absorption layer is obtained by repeating the formation of the precursors and the thermal process in the same manner and a required number of times. SELECTED DRAWING : Figure 2 COPYRIGHT : (C)2017, JPO&INPIT