The amorphous SiO2 layer for relieving stress

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A method of forming a REO dielectric layer and a layer of a-Si between a III-N layer and a silicon substrate. The method includes depositing single crystal REO on the substrate. The single crystal REO has a lattice constant adjacent the substrate matching the lattice constant of the substrate and a lattice constant matching a selected III-N material adjacent an upper surface. A uniform layer of a-Si is formed on the REO. A second layer of REO is deposited on the layer of a-Si with the temperature required for epitaxial growth crystallizing the layer of a-Si and the crystallized silicon being transformed to amorphous silicon after transferring the lattice constant of the selected III-N material of the first layer of REO to the second layer of REO, and a single crystal layer of the selected III-N material deposited on the second layer of REO.