Heterostructure with carrier concentration enhanced by single crystal REO induced strains

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A heterostructure grown on a silicon substrate includes a single crystal rare earth oxide template positioned on a silicon substrate, the template being substantially crystal lattice matched to the surface of the silicon substrate. A heterostructure is positioned on the template and defines at least one heterojunction at an interface between a III-N layer and a III-III-N layer. The template and the heterostructure are crystal matched to induce an engineered predetermined tensile strain at the at least one heterojunction. A single crystal rare earth oxide dielectric layer is grown on the heterostructure so as to induce an engineered predetermined compressive stress in the single crystal rare earth oxide dielectric layer and a tensile strain in the III-III-N layer. The tensile strain in the III-III-N layer and the compressive stress in the REO layer combining to induce a piezoelectric field leading to higher carrier concentration in 2DEG at the heterojunction.