Aluminum nitride sintering and semiconductor maintenance

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Aluminum nitride sintering body 1 is a crystal particles (2) of aluminum nitride comprising Mg, and has a gannet-type crystal structure, a composite oxide comprising a rare earth element and Al, and a complex oxide comprising Mg and Al. Between the crystal particles 2 of aluminum nitride is dotted with particles 3 of the composite oxide and particles 4 of the composite oxide. Composite oxides may contain Y. Crystal particles (2) of aluminum nitride may be less than 1.0mol% or more of the content of Mg when referred to as 100mol% of the entire metal element containing. The semiconductor maintenance device is provided with an aluminum nitride sintered body 1 and a electrostatic adsorption electrode 13.