The laminated structure, a member for a semiconductor manufacturing device and method of manufactur

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A laminated structure 10 includes a first structure 12 containing a main phase of magnesium-aluminum oxynitride, a second structure 14 containing a main phase of aluminum nitride and grain boundary phases of a rare-earth aluminum composite oxide having a garnet-type crystal structure, and a reaction layer 15 formed between the first structure 12 and the second structure 14. The reaction layer 15 is an aluminum nitride layer containing a smaller amount of grain boundary phases 18 of the rare-earth aluminum composite oxide than the second structure 14. The reaction layer 15 of the laminated structure 10 has a thickness of 150 μm or less. The reaction layer 15 is formed during the sintering by diffusing the grain boundary phases 18 into the first structure 12.