MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

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PROBLEM TO BE SOLVED : To impart stable electric characteristics to a semiconductor device using an oxide semiconductor to achieve higher reliability. SOLUTION : A manufacturing process for a transistor including an oxide semiconductor film includes : an implantation step of implanting rare gas ions into at least the oxide semiconductor film; and a heating step of heating the oxide semiconductor film with the rare gas ions implanted, under reduced pressure, under a nitrogen atmosphere, or under a rare gas atmosphere. Thus, hydrogen or water contained in the oxide semiconductor film with the rare gas ions implanted is released, thereby purifying the oxide semiconductor film. COPYRIGHT : (C)2016, JPO&INPIT