METHOD FOR ETCHING FILM HAVING TRANSITION METAL

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Substrate processing device are generated by using a method for etching film including metal is provided. Substrate processing device a, in said chamber and in a plasma generating chamber heat treatment vessel and a second surface opposing the first surface, of plasma generating process chamber is disposed between, to establish communication between the chamber plasma generating process chamber a plurality of openings, having shielding to ultraviolet light of wet liquid to flow down shields. The method is, (a) plasma generating chamber number 1 containing oxygen by generating plasma, with photoresist layer formed said storing the treated air from a process chamber to, oxygen atoms of neutral particles and a step of supplying inside the, (b) said treating chamber, complex the transition metal oxide for gas and a step of supplying inside the number 2, (c) said plasma generating chamber coupled to an upper surface plasma rare gas, said neutral particles atoms of the rare gas treating chamber includes a step of supplying inside the processing.