INDIUM OXIDE-BASED OXIDE SINTERED COMPACT AND PRODUCTION METHOD OF THE SAME

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PROBLEM TO BE SOLVED : To provide an indium oxide-based sputtering target with which an optical film, useful as a transparent conductive oxide film having a refractive index of 2.1 or more and having an extinction coefficient of 4.08×10-2 or less at the wavelength of 380 nm, can be deposited by a direct current sputtering method. SOLUTION : A sputtering target is formed by using an indium oxide-based oxide sintered compact which contains indium oxide, gallium oxide, and cerium oxide, in which the content of indium oxide, gallium oxide, and cerium oxide is 95% or more of the total amount, the ratio of the number of In atoms to the sum total of the number of In atoms, and those of Ga atoms and Ce atoms, In/(In+Ga+Ce), is 0.36-0.54, the ratio of the number of Ga atoms to the same, Ga/(In+Ga+Ce), is 0.30-0.48, and the ratio of the number of Ce atoms to the same, Ce/(In+Ga+Ce), is 0.16-0.32, and Ga and Ce are uniformly dispersed in the oxide sintered compact. COPYRIGHT : (C)2015, JPO&INPIT