Reversible electrical memory high energy density based on polycrystalline solar silicon

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It is claimed a reversible electrical energy storage device is composed of a first current collector, the flat against a first semiconductor is contacted, a second opposite conductivity type to the first semiconductor flat contacted inner semiconductor, a semiconductor in these same conduction type as the first semiconductor and flat contacted third semiconductor flat contacted thereto a second current collector. One characteristic and for the function is important that the difference in work function between the first and second and between the second and third semiconductor at least 3 electron volts. Upon Startup of the arrangement be concentrated in any one of outer semiconductor movable charges, these are the corresponding number of fixed charges in the other outer opposite sign with respect to semiconductor. Due to the large difference in work function between the inner and outer forms a very stable depletion zone from semiconductors, which prevents an internal charge equalisation between the first and third semiconductor. The outer semiconductor are made from para-conductive [...] In a preferred polycrystalline silicon. The inner very low work function consists of a thin layer of a semiconductor n-type rare earth mono sulfide , the rare earth ions are substituted the form (1-x) Bax S part by barium ions with values of 0.01 xof SE 0.6 or from an n-doped diamond film to. This will differences of the work function obtained around 4 electron volts. In a second embodiment, the two outer semiconductor are made from n-conductive polycrystalline silicon from the thin layer of a P-doped and the inner semiconductor silicon nitride, resulting in a difference of the work function of about 3 electron volts leads.