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A method for producing a group 13 nitride crystal, comprises a crystal growth step of reacting nitrogen and a mixed melt (24) containing at least a group 13 metal and at least one of an alkali metal and an alkaline earth metal, in the mixed melt (24), to grow a nitride crystal (27) on a seed crystal (30), wherein at least one of the mixed melt (24) and the seed crystal (30) is rotated in the crystal growth step, a relative speed between the mixed melt (24) and the seed crystal (30) in the crystal growth step is repeatedly fluctuated in accordance with one or a plurality of types of predetermined patterns, and a maximum value of the relative speed indicated by the pattern is 0.01 m/s or more.