OXYNITRIDE SEMICONDUCTOR THIN FILM

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The purpose of the present invention is to provide an oxide semiconductor thin film, which has a relatively high carrier mobility and is suitable as a channel layer material for a TFT, from an oxynitride crystalline thin film. According to the present invention, a crystalline oxynitride semiconductor thin film is obtained by annealing an amorphous oxynitride semiconductor thin film containing In, O and N or an amorphous oxynitride semiconductor thin film containing In, O, N and an additional element M (M is one or more elements selected from among Zn, Ga, Ti, Si, Ge, Sn, W, Mg, Al, Y and rare earth elements) at a heating temperature of 200°C or more for a heating time of 1-120 minutes.