III-N MATERIAL GROWN ON ErAlN BUFFER ON Si SUBSTRATE

文件类型：PDF文档
文件大小：413K
III-N material grown on a buffer on a silicon substrate includes a single crystal electrically insulating buffer positioned on a silicon substrate. The single crystal buffer includes rare earth aluminum nitride substantially crystal lattice matched to the surface of the silicon substrate, i.e. a lattice co-incidence between REAlN and Si better than a 5 : 4 ratio. A layer of single crystal III-N material is positioned on the surface of the buffer and substantially crystal lattice matched to the surface of the buffer.