R-T-B permanent magnet

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The present invention provides a permanent magnet which is excellent in the temperature properties and the magnetic properties of which will not be significantly decreased, compared to the conventional R-T-B based permanent magnet. In the R-T-B based structure, a stacked structure of R1-T-B based crystal layer and Y-T-B based crystal layer can be formed by alternatively stacking R1-T-B and Y-T-B. In this way, a high magnetic anisotropy field of the R1-T-B based crystal layer can be maintained while the temperature coefficient of the Y-T-B based crystal layer can be improved.