The method of manufacturing the perovskite type manganese oxide thin film

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An object of the present invention is to provide a perovskite manganese oxide thin film that (1) allows a first order phase transition and (2) has A-site ordering. One aspect of the present invention provides a perovskite manganese oxide thin film 2 formed on a substrate 1, containing Ba and a rare earth element in the A sites, and having an (m10) orientation (m = 2n; 9 ‰¥ n ‰¥ 1).