Al alloy film for a display device, display device and sputtering target

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PROBLEM TO BE SOLVED : To provide a display device, capable of directly contacting an Al alloy film with a transparent pixel electrode in a wiring structure of a thin-film transistor substrate used in a display device and equipped with an Al alloy film developed for improving the corrosiveness relative to an amine-based stripper which is used in the production process of a thin-film transistor. SOLUTION : This Al alloy film contains 0.2 to 2.0 atom% of Ge, at least one type of element selected from among an element group X (Ag, In, Sn, Ni, Co, Cu), and 0.02 to 1 atom% of at least one type of element selected from among an element group Q that consists of rare earth elements and high-boiling point metals (Ti, Ta, V, Nb, Mo, W, Cr, Zr, Hf), in which the number of deposits having a particle diameter of more than 100 nm is one or less per 10-6cm2. A display device equipped with the Al alloy film is also provided. COPYRIGHT : (C)2010, JPO&INPIT