MANGANESE OXIDE THIN FILM AND OXIDE LAMINATE

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Provided is a thin film or a laminate, which undergoes phase transition through mott transition at room temperature to exhibit a switching function. In one embodiment of the present invention, a perovskite-type manganese oxide thin film (2) formed on a surface of a substrate (1) having a (110) plane orientation or a (210) plane orientation is provided. The manganese oxide thin film has a compositional formula Ln1-xAexMnO3 (wherein Ln represents at least one trivalent rare earth element selected from lanthanoid elements; and Ae represents at least one alkali earth element selected from the group consisting of Ca, Sr and Ba), wherein 0 < x ≤ 1/18 in the compositional formula.