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A mixed gas containing monosilane is released from a semiconductor fabrication equipment (1). A pump unit (2) suctions the mixed gas discharged from the semiconductor fabrication equipment (1) and sends it out to a silane gas treatment unit (20) provided at a stage subsequent to the pump unit (2). Argon gas is used as a purge gas of the pump unit (2). The silane gas treatment unit (20) processes the mixed gas, containing at least hydrogen and monosilane, discharged from the semiconductor fabrication equipment (1) via the pump unit (2). And the silane gas treatment unit (20) separates and recover monosilane from the mixed gas so as to be recycled. Argon recovered by a noble gas treatment unit (30) is used as the purge gas of the pump unit (2).