MANGANESE OXIDE THIN FILM AND OXIDE LAMINATE

文件类型：PDF文档
文件大小：1783K
Provided is a thin film or a laminate that undergoes phase transition due to a Mott transition at room temperature, achieving a switching function. In a certain embodiment of the present invention, a manganese oxide thin film (2), which is formed on a surface of a substrate (1) and has a composition represented by the compositional formula, RMnO3 (where R is at least one type of trivalent rare earth element selected from the lanthanide series), is provided, wherein both the R element and manganese (Mn) form the same atomic layer that is parallel to the substrate surface. In a certain embodiment of the present invention, an oxide laminate is also provided, said oxide laminate having strongly-correlated oxide thin films (3, 31, 32) formed in contact with each other on the manganese oxide thin film (2) of the abovementioned form.