MANGANESE OXIDE THIN FILM AND OXIDE LAMINATE

文件类型：PDF文档
文件大小：2030K
Provided is a thin film or a laminate that undergoes phase transition due to a Mott transition at room temperature, achieving a switching function. In a certain embodiment of the present invention, a manganese oxide thin film (2), which is formed on a surface of a substrate (1) and has a composition represented by the compositional formula, RMnO3 (where R is at least one type of trivalent rare earth element selected from the lanthanide series), is provided, said manganese oxide thin film having an atomic layer containing an R element but not containing manganese (Mn), and an atomic layer containing Mn but not an R element, which are laminated in such a manner as to be alternately lined up in a direction perpendicular to the substrate surface, and having two crystal axes that are not equivalent to each other in the in-plane direction of the substrate surface. In a certain embodiment of the present invention, an oxide laminate is also provided, said oxide laminate having strongly-correlated oxide thin films (3, 31, 32) formed in contact with each other on the manganese oxide thin film (2) of the abovementioned form.