SELF-REFERENCED MAGNETIC RANDOM ACCESS MEMORY (MRAM) CELL COMPRISING FERROMAGNETIC LAYER

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PROBLEM TO BE SOLVED : To provide an MRAM cell that can be written to and read with small writing and reading fields, respectively. SOLUTION : An MRAM cell 1 includes a magnetic tunnel junction comprising : a storage layer 23 having a net storage magnetization direction that is adjustable from a first direction to a second direction when the magnetic tunnel junction 2 is heated at a high temperature threshold and that is pinned at a low temperature threshold; a sense layer 21 having a reversible net sense magnetization direction; and a tunnel barrier layer 22 separating the sense layer from the storage layer. At least one of the storage layer 23 and the sense layer 21 comprises a ferrimagnetic 3d-4f amorphous alloy material having a sub-lattice of 3d transition metal atoms providing a first magnetization direction, and a sub-lattice of 4f rare earth atoms providing a second magnetization direction, such that at a compensation temperature of the at least one of the storage layer 23 and the sense layer 21, the first magnetization direction and the second magnetization direction are substantially equal. COPYRIGHT : (C)2013, JPO&INPIT