Self-Reference Magnetic Random Access Memory (MRAM) Cell comprising Ferrimagnetic Layers

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PURPOSE : A self-reference random access memory cell including a ferrimagnetic layer is provided to read and write data by using a small write field and a small read field.CONSTITUTION : A storage layer(23) includes a pure storage magnetization which is controlled from a first direction to a second direction at a high temperature critical value and is pinned at a low temperature critical value. A sensing layer(21) includes a reversible pure sensing magnetization. A tunnel barrier layer(22) separates the sensing layer from the storage layer. The storage layer and the sensing layer include ferrimagnetic 3d-4f amorphous alloy materials. The ferrimagnetic 3d-4f amorphous alloy materials include sub lattices of 3d transition metal elements to equalize a first magnetization to a second magnetization at one compensation temperature of the storage layer and the sensing layer. One of the storage layer and the sensing layer provides the first magnetization. A sub lattice of a 4f rare-earth element provides the second magnetization.COPYRIGHT KIPO 2013