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Gallate single crystal and preparation thereof

2026-04-08 20:033420下载
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It is an object of the present invention to provide a material for a piezoelectric device used at a high temperature zone, which can be used at the high temperature zone exceeding 400°C and has a resistivity whose temperature dependence is low. The material is characterized by having a composition selected from the group consisting of RE 3 Ga 5-x Al x SiO 14 (wherein RE represents a rare earth, and 0
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