Semiconductor device

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PROBLEM TO BE SOLVED : To provide a semiconductor device including an oxide semiconductor with stable electric characteristics and high reliability. SOLUTION : Provided are a transistor in which an oxide semiconductor layer containing indium, titanium, and zinc is used as a channel formation region, and a semiconductor device including the transistor. As a buffer layer in contact with the oxide semiconductor layer, a metal oxide layer can be used which contains an oxide of one or more elements selected from titanium, aluminum, gallium, zirconium, hafnium, and rare earth elements. COPYRIGHT : (C)2013, JPO&INPIT