SEMICONDUCTOR DEVICE WITH THRESHOLD VOLTAGE CONTROL AND METHOD OF FABRICATING THE SAME

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Semiconductor devices and methods of making semiconductor devices are provided. According to one embodiment, the field effect transistor can contain a semiconductor substrate containing shallow trench isolations; a p-FET and an n-FET; a silicon germanium layer in a recess in the upper surface of the p-FET; a pair of gate dielectrics including a hafnium compound and a rare earth compound disposed on the silicon germanium layer and the upper surface of the n-FET; and a pair of gate electrodes both including the same material disposed on the pair of gate dielectrics.