OXIDE SINTERED BODY, SPUTTERING TARGET, AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM, AND THIN FILM TR

文件类型：PDF文档
文件大小：222K
To provide an oxide sintered body that can form an amorphous semiconductor thin film even when an In content is increased, and a sputtering target.SOLUTION : The present invention provides an oxide sintered body in which an atomic ratio of In elements, Sn elements, Zn elements, and heavy rare earth elements (HREEs : described as X) satisfy the following formulae (1) to (4), a bixbyite structure represented by InOis the main component, and a pyrochlore structure is also included. 0.50≤In/(In+Sn+Zn)≤0.85 (1), 0.10≤Sn/(In+Sn+Zn)≤0.45 (2), 0.05≤Zn/(In+Sn+Zn)≤0.25 (3), and 0.05≤X/(In+Sn+Zn+X)≤0.25 (4), where, the heavy rare earth elements denote at least one element selected from Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu.SELECTED DRAWING : None