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METHOD OF FORMING SILICON OXYNITRIDE FILM

2025-07-27 10:203220下载
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PROBLEM TO BE SOLVED : To provide a method of forming a silicon oxynitride film exhibiting a refractive index of 1.5-2.0 to be used as an intermediate refractive index film for an antireflective coating. SOLUTION : The method of forming the silicon oxynitride film on a substrate in a vacuum chamber with a mixed gas atmosphere containing rare gas and reactive gas by the sputtering method is characterized in that the rare gas contained in the mixed gas is 50-70 vol.% so that a discharge voltage Vx when the reactive gas contains oxygen and nitrogen and a discharge voltage Vo when the reactive gas contains nitrogen but no oxygen satisfy (Vx/Vo)>0.9, thereby obtaining the silicon oxynitride film with the refractive index of 1.5-2.0. COPYRIGHT : (C)2012, JPO&INPIT


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