SILICON NITRIDE SINTERED COMPACT, CIRCUIT BOARD USING THIS AND ELECTRONIC DEVICE

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PROBLEM TO BE SOLVED : To provide a silicon nitride sintered compact which has high dielectric strength and a superior heat-dissipating property and mechanical property, a circuit board using this and an electronic device. SOLUTION : The silicon nitride sintered compact includes silicon nitride as the principal component, and includes magnesium, a rare-earth metal, aluminum and boron, in terms of oxide, respectively, ≥2 to ≤6 mass%, ≥12 to ≥16 mass%, ≤0.1 to ≥0.5 mass% and ≥0.06 to ≤0.32 mass%, and is composed of β-Si3N4 as the main crystal phase and the grain boundary phase containing a component whose composition formula is expressed as RE4Si2N2O7 (RE is a rare-earth metal), wherein the ratio of the first peak intensity I1 of RE4Si2N2O7 at the diffraction angle 30°-35° to the first peak intensity I0 of β-Si3N4 at the diffraction angle 27°-28° (I1/I0) obtained by an X-ray diffraction method is 20% or less (excluding 0%). COPYRIGHT : (C)2012, JPO&INPIT