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A resistive element that, even in the form of a small surface-mountable chip, withstands inrush current well. The body (2) of said resistive element (1) comprises a semiconductor ceramic which consists primarily of a manganese compound represented by the chemical formula (Nd1−xMx)yBazMn2O6 (in which M represents at least one rare-earth element selected from among samarium, gadolinium, europium, terbium, dysprosium, holmium, erbium, and yttrium), wherein x, y, and z satisfy the conditions 0.05 ≤ x ≤ 0.4, 0.80 ≤ y ≤ 1.2, and 0.80 ≤ z ≤ 1.2, respectively.