The sputtering target for forming a thin film resistor and resistor

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PROBLEM TO BE SOLVED : To provide a resistor thin film material having a high stability for high temperature and a desirable temperature characteristic of resistance and a sputtering target for forming the resistor thin film, without adding Al to a conventional Ni-Cr-Si alloy. SOLUTION : The compositions of this sputtering target are Si with 0.2-5.0 mass % and rare earth with 0.01 to 0.5 mass %, including the remaining compositions Cr and Ni whose Cr/Ni ratio is 0.15 to 1.1 mass. This sputtering target is employed to form a resistor thin film on the substrate, and then the formed resistor thin film is heat-treated in air under the conditions that the temperature is 200°C to 500°C and the heat-treatment time is 1 to 10 hours. COPYRIGHT : (C)2006, JPO&NCIPI