分享好友 知识库首页 频道列表

RARE EARTH BORON CARBIDE BASED THERMOELECTRIC SEMICONDUCTOR DOPED WITH TRANSITION METAL, METHOD OF

2026-04-06 15:492370下载
文件类型：PDF文档
文件大小：300K
PROBLEM TO BE SOLVED : To provide an n-type thermoelectric semiconductor consisting of a rare earth boron carbide and exhibiting high performance, e.g. a high Seebeck coefficient. SOLUTION : The trigonal rare earth boron carbide has a composition expressed by a following formula. REB26+XC4+YN1+Z*t(TM)(-10
反对 0
举报 0
收藏 0
打赏 0
评论 0