RARE EARTH BORON CARBIDE BASED THERMOELECTRIC SEMICONDUCTOR DOPED WITH TRANSITION METAL, METHOD OF

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PROBLEM TO BE SOLVED : To provide an n-type thermoelectric semiconductor consisting of a rare earth boron carbide and exhibiting high performance, e.g. a high Seebeck coefficient. SOLUTION : The trigonal rare earth boron carbide has a composition expressed by a following formula. REB26+XC4+YN1+Z*t(TM)(-10

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