FIELD EFFECT TRANSISTOR HAVING CHANNEL LAYER OF PEROVSKITE-TYPE COMPLEX OXIDE, MANUFACTURING METHOD

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PROBLEM TO BE SOLVED : To provide a field effect transistor which changes resistance by injecting a highly concentrated charge into a channel using an electrical double layer method and also to provide a memory element using the field effect transistor as a switching element. SOLUTION : A single crystal film, which has a perovskite structure and comprises a composite oxide represented by chemical formula : A1-xBxNiO3, where A is one element selected from rare earth elements, B is at least one element of the rare earth elements except A, and x is an actual number satisfying 0≤x≤1), is used for a channel layer. COPYRIGHT : (C)2012, JPO&INPIT