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PROBLEM TO BE SOLVED : To provide a method and apparatus for producing a high-quality nitride crystal by which occurrence of steps of crystals is suppressed and there is no generation of inclusion which is a phenomenon of roughness of surface morphology or of intrusion of impurities between steps.
SOLUTION : The method for producing the nitride crystal includes : a first step of housing a seed substrate 1, a crystalline material and an alkali metal or alkaline earth metal in a crucible 3; and a second step of forming a flux 2 of the crystalline material and the alkali metal or alkaline earth metal by heating the crucible 3 and supplying nitrogen gas into the crucible 3 to grow a crystal on the seed substrate 1. In a nitride crystal producing apparatus in which the agitating direction of the flux 2 is only repetitive uniaxial direction, Hf (depth of the flux liquid level)/Do (inside diameter of crucible) in the second step is made to be ≥0.3.
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