Aluminum nitride sintered body and its manufacturing method, and an electronic component using the

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PROBLEM TO BE SOLVED : To make the structure of an aluminum nitride sintered compact fine by properly controlling the sizes of crystal grains and the microstructure of the aluminum nitride sintered compact, to strengthen the bond between each grain boundary phase and each crystal grain so as to improve the strength and fracture toughness value of the sintered compact by properly controlling the components in each grain boundary phase in the aluminum nitride sintered compact, and to provide the aluminum nitride sintered compact having excellent thermal conductivity in addition to the improved properties mentioned above. SOLUTION : In the aluminum nitride sintered compact having the grain boundary phases comprising a rare earth element-oxygen-aluminum-based compound, the amount of the aluminum nitride crystal grains having grain sizes of =95% of the total aluminum nitride crystal grains, the 4-point bending strength is >=420 MPa, the fracture toughness is >=4.5 MPa.m1/2 and the coefficient of thermal conductivity is >=70 and <=130 W/m.k.