NITRIDE SEMICONDUCTOR LASER ELEMENT

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PROBLEM TO BE SOLVED : To form end face protection films which are suppressed in light absorption and do not cause optical breakdown even at high-power operation to a nitride semiconductor laser element. SOLUTION : The nitride semiconductor laser element includes a nitride semiconductor layer that has parallel resonator faces. The resonator faces which are light-emitting faces of the nitride semiconductor layer are covered with protection films formed by laminating two or more dielectric films. A first protection film 113 which is in contact with the resonator faces is a crystalline thin film formed of an aluminum nitride containing a rare earth element. A second protection film 114 is an amorphous thin film formed of an aluminum oxide or an aluminum nitride. An atomic concentration of the rare earth element contained in the first protection film 113 is 1 wt.% or higher. COPYRIGHT : (C)2011, JPO&INPIT