Methods of depositing a metal oxide layer or film using a rare earth metal precursor

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Methods of depositing a single or mixed metal oxide layer or film are described herein. The methods use a rare earth metal precursor are described herein. The rare earth metal precursors have a general formula M[OCR1(R2)(CH2)X]3, wherein M is a rare earth metal, R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR, wherein R is an alkyl group or a substituted alkyl group.