RARE EARTH-DOPED SAPPHIRE FILMS AND RELATED METHODS

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The present invention relates to the growth of single phase rare earth-doped sapphire (α-Al2O3) films on substrates by molecular beam epitaxy. The invention provides for composition of matters, neodymium-doped sapphire films, and methods for making and using thin films of this material. The rare earth-doped films of the present invention are especially useful in solid state lasers.