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Provided is a phosphor crystal film having high brightness, which is obtained by enhancing the crystallinity of a film that consists of aluminum nitride doped with rare earth metal ions at a high content level, and protecting the luminescence intensity thereof from deterioration caused by concentration quenching. More specifically, the phosphor crystal film can be obtained by a process which comprises sputtering aluminum and a rare earth metal in a nitrogen atmosphere to grow a phosphor crystal doped with rare earth metal ions, said process including : preparing such a metal target that the content of a rare earth metal in aluminum nitride can fall within the range of 0.1 to 6% by mole; and conducting the sputtering while controlling the substrate temperature at a prescribed low temperature and while removing water from the residual gas in the vacuum chamber used in the sputtering. Phosphor crystal films have been made at temperatures falling within the range of 100°C or higher but below 300°C. As a result, it has been found that the lower the substrate temperature is, the higher the luminescence intensity is.