SUBSTRATE PROCESSING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

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PROBLEM TO BE SOLVED : To suppress a film thickness loss of an oxide film, which contains at least one of a rare earth oxide and an alkaline-earth oxide, when performing rinsing on a semiconductor substrate. SOLUTION : The oxide film, which contains at least one of a rare earth oxide and an alkaline-earth oxide, is formed on the semiconductor substrate (W). When performing rinsing on the semiconductor substrate (W), a rinse liquid made of an alkaline chemical or an organic solvent is used. COPYRIGHT : (C)2011, JPO&INPIT