Method for producing a single crystal of AlN.

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A method of producing a nitride single crystal includes the step of forming a material transport medium layer (12) containing a compound of rare earth element on a surface of a nitride crystal (11), and the step of making a seed crystal (13) in contact with the material transport medium layer (12) to grow a nitride single crystal (14) on the seed crystal (13). The material transport medium layer (12) contains the compound of rare earth element and at least one compound selected from a group of aluminum compound, alkaline earth compound and transition metal compound. With this producing method, a large nitride single crystal having a crystal size of at least 10 mm is obtained.